Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy
- Böttcher, T.
- Einfeldt, S.
- Figge, S.
- Kirchner, V.
- Hommel, D.
- Selke, H.
- Ryder, P. L.
- Bertram, F.
- Riemann, T.
- Christen, J.
- Lunz, U.
- Becker, C. R.
Publication date
August 1998
DOI Publisher
Institute of Physics, Polish Academy of SciencesAbstract
The luminescence of In$\text{}_{x}$Ga$\text{}_{1-x}$N is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photoluminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap
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