Add to ORKGValence-band structures, hole effective masses and optical gain have been calculated for strained-layer quantum-well laser structures. Results show a logarithmic relation between the peak optical gain and carrier concentration for all possible material compositions of the quaternary system
The work described in this thesis investigates the effects of elastic strain on the performance of I...
The work described in this thesis investigates the effects of elastic strain on the performance of I...
The valence subband structures, density-of-states, and optical gain of (0001) wurtzite InxGa12xN/GaN...
The focus of this investigation is to provide a unified understanding of the relative impact of comp...
We present numerical calculations of material gain and threshold current density in compressively st...
In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band an...
The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are...
[[abstract]]The valence subband structures, optical gain spectra, transparency carrier densities, an...
Strained quantum-well lasers and modulators are studied in this dissertation. Both dc and high-speed...
Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained b...
A detailed microscopic calculation and experimental measurements of the optical gain from a (GaIn)Sb...
Strained quantum-well lasers and modulators are studied in this dissertation. Both dc and high-speed...
The eigenstates of the coupled-band Luttinger Hamiltonian are used to derive modified optical Bloch ...
Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the...
The valance band structure of metalorganic vapor phase epitaxy (MOVPE) grown strained GaxIn1 � xAs...
The work described in this thesis investigates the effects of elastic strain on the performance of I...
The work described in this thesis investigates the effects of elastic strain on the performance of I...
The valence subband structures, density-of-states, and optical gain of (0001) wurtzite InxGa12xN/GaN...
The focus of this investigation is to provide a unified understanding of the relative impact of comp...
We present numerical calculations of material gain and threshold current density in compressively st...
In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band an...
The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are...
[[abstract]]The valence subband structures, optical gain spectra, transparency carrier densities, an...
Strained quantum-well lasers and modulators are studied in this dissertation. Both dc and high-speed...
Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained b...
A detailed microscopic calculation and experimental measurements of the optical gain from a (GaIn)Sb...
Strained quantum-well lasers and modulators are studied in this dissertation. Both dc and high-speed...
The eigenstates of the coupled-band Luttinger Hamiltonian are used to derive modified optical Bloch ...
Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the...
The valance band structure of metalorganic vapor phase epitaxy (MOVPE) grown strained GaxIn1 � xAs...
The work described in this thesis investigates the effects of elastic strain on the performance of I...
The work described in this thesis investigates the effects of elastic strain on the performance of I...
The valence subband structures, density-of-states, and optical gain of (0001) wurtzite InxGa12xN/GaN...