With a newly developed technique, we measure voltage, electric field and charge distribution of high field domains in semi-insulating GaAs under high electric bias. Based on these new quantitative data resolved in time and space, which are synchronized with the current pulses, we confront the generally accepted model which explains the domain formation with field enhanced trapping from EL2
This thesis describes the examination of some of the properties of Gallium Arsenide (GaAs), primari...
The distribution of the electric field and its spatial extent are key predictors of the charge colle...
The transient development of electric-field distributions in a biased GaAs film after low-density op...
With a newly developed technique, we measure voltage, electric field and charge distribution of high...
Contains fulltext : 27973.pdf (publisher's version ) (Open Access
Contains fulltext : 27974.pdf (publisher's version ) (Open Access
Contains fulltext : 27971.pdf (publisher's version ) (Open Access
Two novel techniques-field contrast with a scanning electron microscope and electro-optic probing-ha...
A numerical approach has been used to describe the influence of the traps on the properties of semi-...
The electric field dependence of the absorption coefficient in semi‐insulating GaAs at the absorptio...
We report extremely large field enhancement near the anode of an electrically biased metal/semi-insu...
Heating of electrons by electric fields smaller than that required for generation of domain oscillat...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
Conductivity experiments were carried out on samples of semiinsulating GaAs at liquid helium tempera...
Current pulses produced by absorption of picosecond near-infrared light pulses have been used in ord...
This thesis describes the examination of some of the properties of Gallium Arsenide (GaAs), primari...
The distribution of the electric field and its spatial extent are key predictors of the charge colle...
The transient development of electric-field distributions in a biased GaAs film after low-density op...
With a newly developed technique, we measure voltage, electric field and charge distribution of high...
Contains fulltext : 27973.pdf (publisher's version ) (Open Access
Contains fulltext : 27974.pdf (publisher's version ) (Open Access
Contains fulltext : 27971.pdf (publisher's version ) (Open Access
Two novel techniques-field contrast with a scanning electron microscope and electro-optic probing-ha...
A numerical approach has been used to describe the influence of the traps on the properties of semi-...
The electric field dependence of the absorption coefficient in semi‐insulating GaAs at the absorptio...
We report extremely large field enhancement near the anode of an electrically biased metal/semi-insu...
Heating of electrons by electric fields smaller than that required for generation of domain oscillat...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
Conductivity experiments were carried out on samples of semiinsulating GaAs at liquid helium tempera...
Current pulses produced by absorption of picosecond near-infrared light pulses have been used in ord...
This thesis describes the examination of some of the properties of Gallium Arsenide (GaAs), primari...
The distribution of the electric field and its spatial extent are key predictors of the charge colle...
The transient development of electric-field distributions in a biased GaAs film after low-density op...