Carrier Collection into InGaAs/GaAs Quantum Well: Role of Surface Band Bending
- Ambrazevičius, G.
- Marcinkevičius, S.
- Lideikis, T.
- Naudžius, K.
Publication date
October 1992
DOI Publisher
Institute of Physics, Polish Academy of SciencesAbstract
Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs quantum wells located at different distances from a surface have been studied at 2 K. The influence of surface band bending on carrier transfer into a quantum well is demonstrated. Oscillations due to relaxation of photo-excited carriers in GaAs barrier have been observed in the quantum well photoluminescence excitation spectra
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