A new method of analysing shapes of RHEED intensity oscillations observed during epitaxial growth of ultrathin films is presented. The intensity of the specular electron beam is computed by solving the one-dimensional Schrödinger equation. The method can be used for interpreting data collected at very low glancing angle (< 1°) of the incident electron beam. In the paper we show numerically determined shapes of the intensity oscillations for different cases of settling of atoms at surfaces of growing films
growth chambers worldwide, allowing in-situ monitoring of films grown by molecular beam epitaxy (MBE...
In a recent work, beating in the reflection high energy electron diffraction (RHEED) intensity oscil...
This thesis presents an extensive study of the growth kinetics during low temperature homoepitaxy by...
We report a simulation program which facilitates the calculation of changes in the intensity of spec...
The intensity oscillations of RHEED reflections during molecular beam epitaxial growth are explained...
Reflection High Energy Electron Diffraction (RHEED) is a real-time technique for monitoring the surf...
International audienceIntensity oscillations of the specular (0,0) RHEED spot during layer-by-layer ...
International audienceIntensity oscillations of the specular (0,0) RHEED spot during layer-by-layer ...
The ultrathin high-purity single-crystal indium films with atomically flat surfaces, and precisely k...
We report the study of submonolayer growth of Ge(001) homoepitaxy by molecular beam epitaxy at low t...
In this chapter, reflection high-energy electron diffraction (RHEED) in combination with pulsed lase...
Reflection high energy electron diffraction (RHEED) oscillations recorded during molecular beam epit...
Molecular Beam Epitaxy (MBE) is a versatile technique for growing epitaxial thin films of semiconduc...
In a recent work, beating in the reflection high energy electron diffraction (RHEED) intensity oscil...
In a recent work, beating in the reflection high energy electron diffraction (RHEED) intensity oscil...
growth chambers worldwide, allowing in-situ monitoring of films grown by molecular beam epitaxy (MBE...
In a recent work, beating in the reflection high energy electron diffraction (RHEED) intensity oscil...
This thesis presents an extensive study of the growth kinetics during low temperature homoepitaxy by...
We report a simulation program which facilitates the calculation of changes in the intensity of spec...
The intensity oscillations of RHEED reflections during molecular beam epitaxial growth are explained...
Reflection High Energy Electron Diffraction (RHEED) is a real-time technique for monitoring the surf...
International audienceIntensity oscillations of the specular (0,0) RHEED spot during layer-by-layer ...
International audienceIntensity oscillations of the specular (0,0) RHEED spot during layer-by-layer ...
The ultrathin high-purity single-crystal indium films with atomically flat surfaces, and precisely k...
We report the study of submonolayer growth of Ge(001) homoepitaxy by molecular beam epitaxy at low t...
In this chapter, reflection high-energy electron diffraction (RHEED) in combination with pulsed lase...
Reflection high energy electron diffraction (RHEED) oscillations recorded during molecular beam epit...
Molecular Beam Epitaxy (MBE) is a versatile technique for growing epitaxial thin films of semiconduc...
In a recent work, beating in the reflection high energy electron diffraction (RHEED) intensity oscil...
In a recent work, beating in the reflection high energy electron diffraction (RHEED) intensity oscil...
growth chambers worldwide, allowing in-situ monitoring of films grown by molecular beam epitaxy (MBE...
In a recent work, beating in the reflection high energy electron diffraction (RHEED) intensity oscil...
This thesis presents an extensive study of the growth kinetics during low temperature homoepitaxy by...