Electron tunneling through a quantum dot embedded in a nanowire was studied by the transfer matrix method. A smoothness of the interfaces was taken into account using the analytical parametrization of the potential profile. We calculated the current-voltage characteristics and discussed the effect of the spacer, which separates the quantum dot from the contacts. We found that the tunneling current peak possesses the asymmetric Fano resonance shape in the absence of spacer. The results of calculations agree with the experimental data
A) A generic model of a nanowire with 5 gates. The barrier gates, VBi with i = 1, 2, 3 (light gray),...
We present a model of electron transport through a random distribution of interacting quantum dots e...
We calculate the phase property of the reflection coefficient in two-terminal structures using a lat...
Nanoscale wires and molecules have remarkable electrical properties that make them well suited for n...
In this paper we describe the science of electron transport through nanostructured schemas. We descr...
We have investigated in this thesis the current-voltage response of such nanostructures, particularl...
We review the orthodox theory of single charge tunneling in a semiconductor quantum dot and we exten...
This thesis treats some problems in the field of quantum transport in nanostructures. In the first p...
In this thesis, electron transport in mesoscopic semiconductor nanostructures, in particular so-call...
International audienceElectronic transport is theoretically investigated in laterally confined semic...
The coherent electronic transport in quantum wires with embedded nanostructures is investigated with...
We present a model of electron transport through a random distribution of interacting quantum dots e...
In this thesis, theoretical studies of the transport properties of three nanoscale systems: one-dime...
The transmission through quantum dots (QDs) is calculated using the recursion method. In our calcula...
This Thesis is submitted in partial fulfillment of the requirements for the degree of Bachelor of Ap...
A) A generic model of a nanowire with 5 gates. The barrier gates, VBi with i = 1, 2, 3 (light gray),...
We present a model of electron transport through a random distribution of interacting quantum dots e...
We calculate the phase property of the reflection coefficient in two-terminal structures using a lat...
Nanoscale wires and molecules have remarkable electrical properties that make them well suited for n...
In this paper we describe the science of electron transport through nanostructured schemas. We descr...
We have investigated in this thesis the current-voltage response of such nanostructures, particularl...
We review the orthodox theory of single charge tunneling in a semiconductor quantum dot and we exten...
This thesis treats some problems in the field of quantum transport in nanostructures. In the first p...
In this thesis, electron transport in mesoscopic semiconductor nanostructures, in particular so-call...
International audienceElectronic transport is theoretically investigated in laterally confined semic...
The coherent electronic transport in quantum wires with embedded nanostructures is investigated with...
We present a model of electron transport through a random distribution of interacting quantum dots e...
In this thesis, theoretical studies of the transport properties of three nanoscale systems: one-dime...
The transmission through quantum dots (QDs) is calculated using the recursion method. In our calcula...
This Thesis is submitted in partial fulfillment of the requirements for the degree of Bachelor of Ap...
A) A generic model of a nanowire with 5 gates. The barrier gates, VBi with i = 1, 2, 3 (light gray),...
We present a model of electron transport through a random distribution of interacting quantum dots e...
We calculate the phase property of the reflection coefficient in two-terminal structures using a lat...