AC Conductivity and Dielectric Properties οf Amorphous $Te_{42}As_{36}Ge_{10}Si_{12}$ Glass

$Te_{42}As_{36}Ge_{10}Si_{12}$ chalcogenide composition was prepared by conventional melt-quenching. The ac conductivity and the dielectric properties were carried out in the frequency range 0.5×$10^{3}$-4×$10^{6}$ Hz and temperature range 300-423 K. The analysis of the experimental results of the frequency dependence of ac conductivity $σ_{ac}(ω)$ indicates that $σ_{ac}(ω)$ is proportional to $ω^{s}$ where s> 1. The temperature dependence of both ac conductivity and the parameter s is reasonably well interpreted by the correlated barrier hopping model. The maximum barrier height $W_{m}$ calculated from ac conductivity and the density of localized states were determined. Values of dielectric constant $ε_{1}$ and dielectric loss $ε_{2}$ were found to decrease with frequency and increase with temperature. The analysis of dielectric loss leads to determine the barrier height $W_{m}$ and agrees with that proposed by the theory of hopping of charge carriers over potential barrier between charged defect states as suggested by Elliott in case of chalcogenide glasses