Add to ORKGA theoretical investigation have been presented to exploring the influence of electrons beam current on the electron mirror image deduced inside the scanning electron microscope (SEM). A rough mathematical expression for the electric potential that associated with electron beam is derived. The results clearly shows that the beam current could be used to enhance or conversely deteriorate the phenomena of mirror effect. So this work procedure may consider to be tool controllable of this phenomena for investigation purposes
Better quality imaging is often needed for all optical instruments including the scanning electron m...
Observation of insulators ' surface in low voltage scanning electron microscope (SEM) becomes u...
A new tool providing material contrast control in scanning electron microscopy (SEM) is demonstrated...
An experimental-theoretical investigation have been presented to exploring phenomena of mirror effec...
The use of electron mirrors in aberration correction and surface-sensitive microscopy techniques suc...
All publications on the single contact electron beam induced current (SC-EBIC) technique so far have...
Scanning electron microscopy (SEM) represents a powerful tool for studying spatial structures in con...
This work contains theoretical description of basic features and principles of electron microscopy, ...
International audienceA silicon p-n junction has been mapped using electron beam induced current in ...
Current methodology of imaging in the scanning electron microscopy is based on the detection of sign...
We have investigated the contributions of surface effects to Monte Carlo simulations of top-down sca...
Theoretical analysis of dimensional measurements made using a scanning electron microscope (SEM) req...
The high negative bias of a sample in a scanning electron microscope constitutes the “cathode lens” ...
Charge absorbed in a specimen during observation in SEM is a result of unbalance between incoming an...
International audienceA method has been developed to link the geometry of the trapped charge distrib...
Better quality imaging is often needed for all optical instruments including the scanning electron m...
Observation of insulators ' surface in low voltage scanning electron microscope (SEM) becomes u...
A new tool providing material contrast control in scanning electron microscopy (SEM) is demonstrated...
An experimental-theoretical investigation have been presented to exploring phenomena of mirror effec...
The use of electron mirrors in aberration correction and surface-sensitive microscopy techniques suc...
All publications on the single contact electron beam induced current (SC-EBIC) technique so far have...
Scanning electron microscopy (SEM) represents a powerful tool for studying spatial structures in con...
This work contains theoretical description of basic features and principles of electron microscopy, ...
International audienceA silicon p-n junction has been mapped using electron beam induced current in ...
Current methodology of imaging in the scanning electron microscopy is based on the detection of sign...
We have investigated the contributions of surface effects to Monte Carlo simulations of top-down sca...
Theoretical analysis of dimensional measurements made using a scanning electron microscope (SEM) req...
The high negative bias of a sample in a scanning electron microscope constitutes the “cathode lens” ...
Charge absorbed in a specimen during observation in SEM is a result of unbalance between incoming an...
International audienceA method has been developed to link the geometry of the trapped charge distrib...
Better quality imaging is often needed for all optical instruments including the scanning electron m...
Observation of insulators ' surface in low voltage scanning electron microscope (SEM) becomes u...
A new tool providing material contrast control in scanning electron microscopy (SEM) is demonstrated...