Silicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to operate at high temperatures, and extreme chemical inertness to most of the electrolytes, are very attractive for high-power applications. In this paper, properties, advantages, and limitations of SiC and conventional Si materials are compared. Various applications, where SiC power devices are attractive, are discussed
Abstract: Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a w...
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher ...
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, ...
Silicon (Si) based power devices have been employed in most high power applications since decades ag...
The aim of the present paper is to give the state of the art of the silicon carbide technology by “...
International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the...
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging...
This paper deals with possibility of application of the semiconductor devices based on the SiC (Sili...
Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a wide band g...
Silicon-based power semiconductor devices, ranging from diodes, thyristors, gate turn-off thyristors...
Silicon has been the number one choice of materials for over 40 years. It has reached an almost perf...
Silicon carbide (SiC) is a wide band gap material that shows great promise in high-power and high te...
The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by...
Silicon carbide based semiconductor electronic devices and circuits are presently being developed fo...
The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is bri...
Abstract: Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a w...
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher ...
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, ...
Silicon (Si) based power devices have been employed in most high power applications since decades ag...
The aim of the present paper is to give the state of the art of the silicon carbide technology by “...
International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the...
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging...
This paper deals with possibility of application of the semiconductor devices based on the SiC (Sili...
Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a wide band g...
Silicon-based power semiconductor devices, ranging from diodes, thyristors, gate turn-off thyristors...
Silicon has been the number one choice of materials for over 40 years. It has reached an almost perf...
Silicon carbide (SiC) is a wide band gap material that shows great promise in high-power and high te...
The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by...
Silicon carbide based semiconductor electronic devices and circuits are presently being developed fo...
The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is bri...
Abstract: Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a w...
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher ...
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, ...