AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell
- Dawidowski, W.
- Ściana, B.
- Zborowska-Lindert, I.
- Mikolásek, M.
- Latkowska, M.
- Radziewicz, D.
- Pucicki, D.
- Bielak, K.
- Badura, M.
- Kováč, J.
- Tłaczała, M.
Publication date
January 2014
DOI Publisher
Polska Akademia Nauk. Czasopisma i Monografie PANAbstract
Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed
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