Tunability of near infrared opto-synaptic properties of thin MoO3 films fabricated by atomic layer deposition

Thin MoO3 films with different thickness at nanoscale were fabricated by atomic layer deposition technique over Au electrodes on the Si/SiO2 wafers. Bis(t-butylimido) bis (dimethylamino) molybdenum(VI) (C12H30N4Mo) and O-2 plasma were used as Mo precursor and oxygen source, respectively. Both crystalline phase stabilization and oxygen vacancies enhancement of thin MoO3 films were observed after their annealing in inert atmosphere at 250 degrees C for 1.0 h. Memristive and opto-synaptic functionalities of thin MoO3 films were investigated under lambda = 785 nm light illumination. Long-term plasticity and tunablity of the infrared (IR) light plasmonic synapses based on thin MoO3 can significantly simplify circuits of the advanced opto-electronic systems and neuro-optoelectronic instruments