Doctor of PhilosophyDepartment of PhysicsHongxing JiangInGaN based, blue and green light emitting diodes (LEDs) have been successfully produced over the past decade. But the progress of these LEDs is often limited by the fundamental problems of InGaN such as differences in lattice constants, thermal expansion coefficients and physical properties between InN and GaN. This difficulty could be addressed by studying pure InN and In[subscript]xGa[subscript]1-xN alloys. In this context Ga-rich In[subscript]xGa[subscript]1-xN (x≤ 0.4) epilayers were grown by metal organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) measurements showed In[subscript]xGa[subscript]1-xN films with x= 0.37 had single phase. Phase separation occurred...
We report the growth of indium-rich InGaN alloys by metal-organic vapour phase epitaxy, using ammon...
Photoluminescence (PL) and electroreflectance (ER)measurements on In-rich In xGa 1-xN films grown by...
Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary...
Doctor of PhilosophyDepartment of PhysicsHongxing JiangInGaN based, blue and green light emitting di...
InGaN based, blue and green light emitting diodes (LEDs) have been successfully produced over the pa...
The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible...
We report on the growth of In-rich InGaN layers on GaN/sapphire templates. InGaN layers of various I...
The development of In{sub x}Ga{sub 1-x} N/GaN thin film growth by Molecular Beam Epitaxy has opened ...
Among the III-nitride semiconductors (Ga, Al, In) N, InN is the most attractive one due to having th...
During the last few years the interest in the indium nitride (InN) semiconductor has been remarkable...
InN and In-rich alloys have not been investigated thoroughly because of difficulties associated with...
Indium nitride (InN) and indium-rich group III-nitride alloys are promising for a variety of advance...
InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical va...
In this paper, we describe the growth and characterization of InGaN single quantum wells with emissi...
This paper reports on the fabrication of In xGa 1 - xN (InGaN) layers with various compositions rang...
We report the growth of indium-rich InGaN alloys by metal-organic vapour phase epitaxy, using ammon...
Photoluminescence (PL) and electroreflectance (ER)measurements on In-rich In xGa 1-xN films grown by...
Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary...
Doctor of PhilosophyDepartment of PhysicsHongxing JiangInGaN based, blue and green light emitting di...
InGaN based, blue and green light emitting diodes (LEDs) have been successfully produced over the pa...
The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible...
We report on the growth of In-rich InGaN layers on GaN/sapphire templates. InGaN layers of various I...
The development of In{sub x}Ga{sub 1-x} N/GaN thin film growth by Molecular Beam Epitaxy has opened ...
Among the III-nitride semiconductors (Ga, Al, In) N, InN is the most attractive one due to having th...
During the last few years the interest in the indium nitride (InN) semiconductor has been remarkable...
InN and In-rich alloys have not been investigated thoroughly because of difficulties associated with...
Indium nitride (InN) and indium-rich group III-nitride alloys are promising for a variety of advance...
InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical va...
In this paper, we describe the growth and characterization of InGaN single quantum wells with emissi...
This paper reports on the fabrication of In xGa 1 - xN (InGaN) layers with various compositions rang...
We report the growth of indium-rich InGaN alloys by metal-organic vapour phase epitaxy, using ammon...
Photoluminescence (PL) and electroreflectance (ER)measurements on In-rich In xGa 1-xN films grown by...
Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary...