Identification of Ne l Vector Orientation in Antiferromagnetic Domains Switched by Currents in Ni O Pt Thin Films

Understanding the electrical manipulation of the antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequencies. Focusing on collinear insulating antiferromagnetic NiO Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the N el vector direction changes. We demonstrate electrical switching between different T domains by current pulses, finding that the N el vector orientation in these domains is along [ 5 5 19], different compared to the bulk amp; 10216;112 amp; 10217; directions. The final state of the in plane component of the N el vector nIP after switching by current pulses j along the [1 10] directions is nIP amp; 8741;j. By comparing the observed N el vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as b0 2b1 3 107J m3. This information is key for the understanding of current induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic device