Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
- Boucaud, Philippe
- Elbaz, A
- Arefin, R
- Sakat, E
- Wang, B
- Herth, E
- Patriarche, G
- Foti, A
- Ossikovski, ¶,
- Sauvage, ¶,
- Checoury, X
- Pantzas, K
- Sagnes, I
- Chretien, J
- Casiez, L
- Bertrand, M.
- Calvo, V
- Pauc, N
- Chelnokov, A
- Boeuf, ⊥,
- Reboud, V
- Hartmann, J.-M
- El Kurdi, M
Publication date
September 2020
DOI Publisher
American Chemical Society (ACS)Abstract
International audienceGeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on ger-manium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack
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