The effect of dead space on the statistics of the gain in a double-carrier-multiplication avalanche photodiode (APD) is determined using a recurrence method. The dead space is the minimum distance that a newly generated carrier must travel in order to acquire sufficient energy to become capable of causing an impact ionization. Recurrence equations are derived for the first moment, the second moment, and the probability distribution function of two random variables that are related, in a deterministic way, to the random gain of the APD. These equations are solved numerically to produce the mean gain and the excess noise factor. The presence of dead space reduces both the mean gain and the excess noise factor of the device. This may have a be...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
The effect of dead space on the statistics of the gain process in continuous-multiplication avalanch...
The statistical properties of the impulse response function of double-carrier multiplication avalanc...
The effect of dead space on the mean gain, the excess noise factor, and the avalanche breakdown volt...
A random path length model for X-ray avalanche photodiodes (APDs) has been used to assess the effect...
A random path length model for X-ray avalanche photodiodes (APDs) has been used to assess the effect...
Background and motivation: Avalanche Photodiodes are optoelectrical devices with an internal gain pr...
Abstract-Approximate analytical expressions are derived for the mean gain and the excess noise facto...
The conventional McIntyre carrier multiplication theory for avalanche photodiodes (APDs) does not ad...
Bit-error rates are computed for an on-off keying optical communication system using avalanche photo...
Abstract—This paper reports a novel recurrence theory that enables us to calculate the exact joint p...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
The effect of dead space on the statistics of the gain process in continuous-multiplication avalanch...
The statistical properties of the impulse response function of double-carrier multiplication avalanc...
The effect of dead space on the mean gain, the excess noise factor, and the avalanche breakdown volt...
A random path length model for X-ray avalanche photodiodes (APDs) has been used to assess the effect...
A random path length model for X-ray avalanche photodiodes (APDs) has been used to assess the effect...
Background and motivation: Avalanche Photodiodes are optoelectrical devices with an internal gain pr...
Abstract-Approximate analytical expressions are derived for the mean gain and the excess noise facto...
The conventional McIntyre carrier multiplication theory for avalanche photodiodes (APDs) does not ad...
Bit-error rates are computed for an on-off keying optical communication system using avalanche photo...
Abstract—This paper reports a novel recurrence theory that enables us to calculate the exact joint p...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...
Mean gain characteristics based on carrier pair injected position in avalanche photodiodes (APDs) is...