The hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO3 (LCMO)-based memristive devices were investigated. The oxide films were grown by pulsed laser deposition (PLD) and sandwiched between Ag and Pt electrodes. The devices exhibit bipolar resistive switching (RS) effect with well-defined intermediate conduction states that arise from partial SET and RESET events. The current-voltage curves are modeled and simulated using a compact memristive approach. Two equations are considered: one for the electron transport based on the double-diode equation and the other for the memory state of the device driven by the play operator with logistic ridge functions. An expression that accounts for the remnant resistance of the dev...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
Memristive devices are novel electronic devices, which resistance can be tuned by an external voltag...
We report on non-volatile memory devices based on multifunctional manganites. The electric field ind...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
The hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO3 (LCMO)-based memrist...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
Memristive devices are novel electronic devices, which resistance can be tuned by an external voltag...
We report on non-volatile memory devices based on multifunctional manganites. The electric field ind...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
International audienceThe hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO...
The hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO3 (LCMO)-based memrist...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pu...
Memristive devices are novel electronic devices, which resistance can be tuned by an external voltag...
We report on non-volatile memory devices based on multifunctional manganites. The electric field ind...