X-ray analysis of ferroelectric thin layers of Ba1∕2Sr1∕2TiO3 with different thicknesses reveals the presence of strain gradients across the films and allows us to propose a functional form for the internal strain profile. We use this to calculate the influence of strain gradient, through flexoelectric coupling, on the degradation of the ferroelectric properties of films with decreasing thickness, in excellent agreement with the observed behavior. This paper shows that strain relaxation can lead to smooth, continuous gradients across hundreds of nanometers, and it highlights the pressing need to avoid such strain gradients in order to obtain ferroelectric films with bulklike properties
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
A ferroelectric is a material that displays an spontaneous electrical polarization that is switchabl...
X-ray analysis of ferroelectric thin layers of Ba1∕2Sr1∕2TiO3 with different thicknesses reveals the...
X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thicknesses reveals the...
X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thicknesses reveals the...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Recent experimental measurements of large flexoelectric coefficients in ferroelectric ceramics sugge...
We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a...
Recent experimental measurements of large flexoelectric coefficients in ferroelectric ceramics sugge...
Recent experimental measurements of large flexoelectric coefficients in ferroelectric ceramics sugge...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
A ferroelectric is a material that displays an spontaneous electrical polarization that is switchabl...
X-ray analysis of ferroelectric thin layers of Ba1∕2Sr1∕2TiO3 with different thicknesses reveals the...
X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thicknesses reveals the...
X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thicknesses reveals the...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Recent experimental measurements of large flexoelectric coefficients in ferroelectric ceramics sugge...
We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a...
Recent experimental measurements of large flexoelectric coefficients in ferroelectric ceramics sugge...
Recent experimental measurements of large flexoelectric coefficients in ferroelectric ceramics sugge...
Strain engineering enables modification of the properties of thin films using the stress from the su...
Strain engineering enables modification of the properties of thin films using the stress from the su...
A ferroelectric is a material that displays an spontaneous electrical polarization that is switchabl...