Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. ...
The impact of solid state lighting on the world has been remarkable. The improvement in efficiency a...
Bluish-green semipolar GaInN/GaN light emitting diodes (LEDs) were investigated as possible candidat...
Cataloged from PDF version of article.The characteristics of electroluminescence (EL) and photolumin...
The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the g...
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor ind...
(11-22) semi-polar GaN is expected to exhibit major advantages compared with current c-plane polar G...
Light emitting diodes (LEDs) based on the (In,Al,Ga)N material system offer the possibility to gener...
In this thesis the epitaxy of semipolar GaN on patterned sapphire substrates was systematically inve...
We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostru...
High spatial-resolution confocal photoluminescence (PL) measurements have been performed on a series...
We have demonstrated non-polar a-plane InGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs...
DoctorOptoelectronic devices based on a wide band gap semiconductor GaN been received plenty of inte...
Optoelektronische Bauelemente auf der Basis von Galliumnitrid (GaN) und seinen Legierungen InGaN und...
Nitride based materials are the source of disruptive technologies. Despite the technological turmoil...
Gallium nitride (GaN) thin films grown along c-plane (polar) direction are extensively employed for ...
The impact of solid state lighting on the world has been remarkable. The improvement in efficiency a...
Bluish-green semipolar GaInN/GaN light emitting diodes (LEDs) were investigated as possible candidat...
Cataloged from PDF version of article.The characteristics of electroluminescence (EL) and photolumin...
The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the g...
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor ind...
(11-22) semi-polar GaN is expected to exhibit major advantages compared with current c-plane polar G...
Light emitting diodes (LEDs) based on the (In,Al,Ga)N material system offer the possibility to gener...
In this thesis the epitaxy of semipolar GaN on patterned sapphire substrates was systematically inve...
We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostru...
High spatial-resolution confocal photoluminescence (PL) measurements have been performed on a series...
We have demonstrated non-polar a-plane InGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs...
DoctorOptoelectronic devices based on a wide band gap semiconductor GaN been received plenty of inte...
Optoelektronische Bauelemente auf der Basis von Galliumnitrid (GaN) und seinen Legierungen InGaN und...
Nitride based materials are the source of disruptive technologies. Despite the technological turmoil...
Gallium nitride (GaN) thin films grown along c-plane (polar) direction are extensively employed for ...
The impact of solid state lighting on the world has been remarkable. The improvement in efficiency a...
Bluish-green semipolar GaInN/GaN light emitting diodes (LEDs) were investigated as possible candidat...
Cataloged from PDF version of article.The characteristics of electroluminescence (EL) and photolumin...