A comprehensive theoretical study of electronic and magnetic properties of V-doped ZnO in bulk as well as (112¯0)thin films has been performed using density functional theory. Vanadium atoms substituted at Zn sites show very little selectivity of site occupancy. More importantly, different geometries with ferromagnetic, ferrimagnetic, and antiferromagnetic configurations are found to be energetically nearly degenerate both in Zn1−xVxO bulk and subsurface layers of the thin film. On the other hand, V atoms couple ferromagnetically when they occupy surface sites of the thin film. The diverse magnetic behaviors in V-doped ZnO account for the many reported conflicting experimental results
The injection impurity element into ZnO has added new dimension to its versatile applications partic...
Contrary to theoretical prediction that Cr-doped bulk ZnO is ferromagnetic, recent experiments on Cr...
Zinc oxide (ZnO), a hexagonal n-type semiconductor, has been widely studied because of the ease of c...
A comprehensive theoretical study of electronic and magnetic properties of V-doped ZnO in bulk as we...
Extensive calculations based oil density functional theory have been carried out to understand the d...
Theoretical calculations based on density-functional theory and generalized gradient approximation h...
First-principles calculations of total energies and magnetism of Zn1−xMnxOthin film are performed by...
The introduction of ferromagnetic order in ZnO results in a transparent piezoelectric ferromagnet an...
Extensive calculations based on density functional theory have been carried out to understand the or...
The magnetic source of Mn doping and Zn vacancy coexisting in ZnO is controversial. To solve this pr...
Electronic and magnetic properties of V-doped ZnO nanotubes in which one of Zn(2+) ions is substitut...
A comprehensive theoretical investigation on the electronic and magnetic properties of V-doped and H...
By studying Fe-doped ZnO pellets and thin films with various X-ray spectroscopic techniques, and com...
Journal ArticleHere we report systematic studies on the epitaxial growth and properties of Zn1−xVxO[...
First-principles calculations based on gradient corrected density functional theory are performed on...
The injection impurity element into ZnO has added new dimension to its versatile applications partic...
Contrary to theoretical prediction that Cr-doped bulk ZnO is ferromagnetic, recent experiments on Cr...
Zinc oxide (ZnO), a hexagonal n-type semiconductor, has been widely studied because of the ease of c...
A comprehensive theoretical study of electronic and magnetic properties of V-doped ZnO in bulk as we...
Extensive calculations based oil density functional theory have been carried out to understand the d...
Theoretical calculations based on density-functional theory and generalized gradient approximation h...
First-principles calculations of total energies and magnetism of Zn1−xMnxOthin film are performed by...
The introduction of ferromagnetic order in ZnO results in a transparent piezoelectric ferromagnet an...
Extensive calculations based on density functional theory have been carried out to understand the or...
The magnetic source of Mn doping and Zn vacancy coexisting in ZnO is controversial. To solve this pr...
Electronic and magnetic properties of V-doped ZnO nanotubes in which one of Zn(2+) ions is substitut...
A comprehensive theoretical investigation on the electronic and magnetic properties of V-doped and H...
By studying Fe-doped ZnO pellets and thin films with various X-ray spectroscopic techniques, and com...
Journal ArticleHere we report systematic studies on the epitaxial growth and properties of Zn1−xVxO[...
First-principles calculations based on gradient corrected density functional theory are performed on...
The injection impurity element into ZnO has added new dimension to its versatile applications partic...
Contrary to theoretical prediction that Cr-doped bulk ZnO is ferromagnetic, recent experiments on Cr...
Zinc oxide (ZnO), a hexagonal n-type semiconductor, has been widely studied because of the ease of c...