International audienceThe integration of low-k interlayer dielectrics in interconnects is associated with an increase in mechanical reliability risks. Thermomechanical stresses must be evaluated to understand the behavior of interconnects. As manufacturing processes can introduce large stresses, a sequential process modeling technique is developed in this study. The constituent materials of the interconnects are described by a single elasto-plastic constitutive equation developed from substrate curvature measurements. Stresses in Cu/low-k lines are also evaluated. A good correlation between finite element modeling and curvature measurements is obtained
The interconnection of silicon solar cells by soldering causes thermomechanical stress due to differ...
Abstract − Through comparing stress state of TEOS and SiLK-embedded structures, the effect of low-k ...
Abstract—A simple theoretical analysis for curvature evolution in unpassivated and passivated copper...
Copper and low dielctric constantant (k) materials are poised to become the dominant interconnect sc...
This thesis is motivated by reliability problems related to thermal stresses in electronic Cu/low-K ...
This paper presents the results of a systematic study of curvature and stress evolution during therm...
textThermal stress characteristics of high performance interconnects, including Al(Cu)/low-k, Cu/ox...
In the semiconductor industry, thermo-mechanical reliability has been a critical issue for both pac...
\u3cp\u3eFor backend processes, thermo-mechanical failure is one of the major failure modes. A repre...
Computer-based thermo-mechanical design and performance optimization are in widespread use and mainl...
textThermomechanical stresses in the copper interconnects are directly related to void formation an...
For backend processes, thermo-mechanical failure is one of the major failure modes. A representative...
Cu and low-dielectric-constant (k) metallization schemes are critical for improved performance of in...
Publisher Copyright: AuthorSolid-liquid interdiffusion (SLID) bonding finds a wide variety of potent...
The miniaturization of integrated circuits (ICs) has led to the use of copper and low-k dielectrics ...
The interconnection of silicon solar cells by soldering causes thermomechanical stress due to differ...
Abstract − Through comparing stress state of TEOS and SiLK-embedded structures, the effect of low-k ...
Abstract—A simple theoretical analysis for curvature evolution in unpassivated and passivated copper...
Copper and low dielctric constantant (k) materials are poised to become the dominant interconnect sc...
This thesis is motivated by reliability problems related to thermal stresses in electronic Cu/low-K ...
This paper presents the results of a systematic study of curvature and stress evolution during therm...
textThermal stress characteristics of high performance interconnects, including Al(Cu)/low-k, Cu/ox...
In the semiconductor industry, thermo-mechanical reliability has been a critical issue for both pac...
\u3cp\u3eFor backend processes, thermo-mechanical failure is one of the major failure modes. A repre...
Computer-based thermo-mechanical design and performance optimization are in widespread use and mainl...
textThermomechanical stresses in the copper interconnects are directly related to void formation an...
For backend processes, thermo-mechanical failure is one of the major failure modes. A representative...
Cu and low-dielectric-constant (k) metallization schemes are critical for improved performance of in...
Publisher Copyright: AuthorSolid-liquid interdiffusion (SLID) bonding finds a wide variety of potent...
The miniaturization of integrated circuits (ICs) has led to the use of copper and low-k dielectrics ...
The interconnection of silicon solar cells by soldering causes thermomechanical stress due to differ...
Abstract − Through comparing stress state of TEOS and SiLK-embedded structures, the effect of low-k ...
Abstract—A simple theoretical analysis for curvature evolution in unpassivated and passivated copper...