Metallization of Vias in Silicon Wafers to Produce Three-Dimensional Microstructures
- Vorobjova, A. I.
- Labunov, V. A.
- Outkina, E. A.
- Grapov, D. V.
- Воробьева, А. И.
- Лабунов, В. А.
- Уткина, Е. А.
- Грапов, Д. В.
DOIAbstract
The processes of electrochemical deposition into a matrix of vertical vias of different diameters (500–2000 nm) in Si/SiO2 substrates with a TiN barrier layer at the bottom of the holes are studied. Morpho- logical studies of the metal in the holes show that the structure of copper clusters is rather uniform and is formed from crystallites of ~30 to 50 nm. Repeatability and stability with a homogeneous structure and with holes filled 100% by Cu determine the prospect of using the Si/SiO2/Cu system as a basic element for creating three-dimensional micro- and nanostructures, as well as for the 3D assembly of IC crystals
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