We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of the transition metal dichalcogenide (TMDC) WSe2 . Employing time- and angle-resolved photoelectron spectroscopy (trARPES) and complementary time-dependent density functional theory (TDDFT), we observe spin-, valley-, and layer-polarized excited state populations upon excitation with circularly polarized pump pulses, followed by ultrafast scattering of carriers towards the global minimum of the conduction band. TDDFT reveals the character of the conduction band, into which electrons are initially excited, to be two-dimensional and localized within individual layers, whereas at the minimum of the conduction band, states have a three-dimensional ...
The authors acknowledge support from the Engineering and Physical Sciences Research Council, UK, the...
We employ time- and angle-resolved photoemission spectroscopy to study the spin- and valley-selectiv...
We report on nanosecond-long, gate-dependent valley lifetimes of free charge carriers in monolayer W...
We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of t...
We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of t...
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum tec...
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum tec...
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum tec...
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum tec...
Atomically thin layers of group VI transition metal dichalcogenides (TMDCs) have been recognized as ...
Data are available from http://dx.doi.org/10.17630/a25b95c6-b9e8-4ecf-9559-bb09e58a7835The semicondu...
Abstract Transition metal dichalcogenides (TMDs) have attracted much attention in the fields of vall...
The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient ma...
The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient ma...
The valley degree of freedom in layered transition-metal dichalcogenides provides an opportunity to ...
The authors acknowledge support from the Engineering and Physical Sciences Research Council, UK, the...
We employ time- and angle-resolved photoemission spectroscopy to study the spin- and valley-selectiv...
We report on nanosecond-long, gate-dependent valley lifetimes of free charge carriers in monolayer W...
We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of t...
We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of t...
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum tec...
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum tec...
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum tec...
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum tec...
Atomically thin layers of group VI transition metal dichalcogenides (TMDCs) have been recognized as ...
Data are available from http://dx.doi.org/10.17630/a25b95c6-b9e8-4ecf-9559-bb09e58a7835The semicondu...
Abstract Transition metal dichalcogenides (TMDs) have attracted much attention in the fields of vall...
The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient ma...
The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient ma...
The valley degree of freedom in layered transition-metal dichalcogenides provides an opportunity to ...
The authors acknowledge support from the Engineering and Physical Sciences Research Council, UK, the...
We employ time- and angle-resolved photoemission spectroscopy to study the spin- and valley-selectiv...
We report on nanosecond-long, gate-dependent valley lifetimes of free charge carriers in monolayer W...