A multiscale simulation platform predicts the effect of atomic level defects in thin films on the electrical characteristics of nanoscale devices and identifies ways to engineer these defects to achieve optimum performance and reliability in logic and memory circuits
Scaling of CMOS towards its ultimate limits, where quantum effects and atomistic variability due to ...
With increasing complexity of the systems and ongoing miniaturization, structural dimensions cross o...
We present a multiscale modeling platform that exploits ab-initio calculation results and a material...
A multiscale simulation platform predicts the effect of atomic level defects in thin films on the el...
The semiconductor technology development requires a full understanding of material implications at t...
In this work, we present a multiscale simulation platform as a viable tool to engineer novel electro...
In this work, we present a multiscale simulation platform as a viable tool to engineer novel electro...
Our era is defined by its technology, and our future is dependent on its continued evolution. Over t...
The continuous miniaturization of electronics has led to smaller and more powerful devices inour eve...
In this work we present a novel simulation-based methodology for the defect spectroscopy in dielectr...
A highly efficient and novel atomistic simulation framework is first established for the thermal and...
Multiresolution molecular-dynamics approach for multimillion atom simulations has been used to inves...
Home2005.htm), scaling of CMOS tech-nology will face several practical and theoretical difficulties ...
Now that the modeling of simple semiconductor systems has become reliable, accurate and routine, att...
We are currently witnessing rapid advances in atomistic level computations in materials science and ...
Scaling of CMOS towards its ultimate limits, where quantum effects and atomistic variability due to ...
With increasing complexity of the systems and ongoing miniaturization, structural dimensions cross o...
We present a multiscale modeling platform that exploits ab-initio calculation results and a material...
A multiscale simulation platform predicts the effect of atomic level defects in thin films on the el...
The semiconductor technology development requires a full understanding of material implications at t...
In this work, we present a multiscale simulation platform as a viable tool to engineer novel electro...
In this work, we present a multiscale simulation platform as a viable tool to engineer novel electro...
Our era is defined by its technology, and our future is dependent on its continued evolution. Over t...
The continuous miniaturization of electronics has led to smaller and more powerful devices inour eve...
In this work we present a novel simulation-based methodology for the defect spectroscopy in dielectr...
A highly efficient and novel atomistic simulation framework is first established for the thermal and...
Multiresolution molecular-dynamics approach for multimillion atom simulations has been used to inves...
Home2005.htm), scaling of CMOS tech-nology will face several practical and theoretical difficulties ...
Now that the modeling of simple semiconductor systems has become reliable, accurate and routine, att...
We are currently witnessing rapid advances in atomistic level computations in materials science and ...
Scaling of CMOS towards its ultimate limits, where quantum effects and atomistic variability due to ...
With increasing complexity of the systems and ongoing miniaturization, structural dimensions cross o...
We present a multiscale modeling platform that exploits ab-initio calculation results and a material...
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