Renormalization of Hole-hole Interaction at Decreasing Drude Conductivity: Gated GaAs/ Inx Ga1-x As GaAs Heterostructures

Minkov, G. M.
Germanenko, A. V.
Rut, O. E.
Sherstobitov, A. A.
Zvonkov, B. N.

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Publication date

January 2007

Publisher

American Physical Society (APS)

Journal

Physical Review B

Abstract

The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/ Inx Ga1-x As GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor αi <1 in the conventional expression for the interaction correction. © 2007 The American Physical Society.We would like to thank I. V. Gornyi for very useful discussions and I. S. Burmistrov for a critical reading of the manuscript and valuable comments. This work was supported in part by the RFBR (Grants No. 05-02-16413, No. 06-02-16292, and No. 07-02-00528), and the CRDF (Grant No. Y3-P-05-1...

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Renormalization of Hole-hole Interaction at Decreasing Drude Conductivity: Gated GaAs/ Inx Ga1-x As GaAs Heterostructures

Abstract

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Renormalization of Hole-hole Interaction at Decreasing Drude Conductivity: Gated GaAs/ Inx Ga1-x As GaAs Heterostructures

Abstract

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