Diffusivity-mobility ratio in heavily doped quantum wells under intense light waves

In this paper we investigate the influence of strong light waves on the two dimensional diffusivity mobility ratio in heavily doped quantum wells of III–V, ternary and quaternary semiconductors within the framework of k.p formalism by formulating a new electron energy spectrum. It appears taking heavily doped quantum wells of InSb, InAs, Hg1–x Cd x Te and In1–x Ga x As1–y P y lattice matched to InP as examples that the said ratio decreases with increasing film thickness, intensity, wave length and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The ratio increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. We have suggested an experimental method of determining heavily doped two dimensional diffusivity mobility ratios for materials having arbitrary dispersion laws