Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in ag...
We report on the electronic transport of graphene nanoribbon (GNR) arrays fabricated by a chemical u...
Bandgap engineering is used to create semiconductor heterostructure devices that perform processes s...
Advancements in on-surface materials synthesis have led to the development of atomically precise gra...
Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applicati...
Lateral heterojunctions of atomically precise graphene nanoribbons GNRs hold promise for applicati...
Although it is generally accepted that structural parameters like width, shape, and edge structure c...
Graphene nanoribbons (GNRs) are promising candidates for next-generation integrated circuit (IC) com...
Graphene nanoribbons could potentially be used to create molecular wires with tailored conductance p...
With the advent of atomically precise synthesis and consequent precise tailoring of their electronic...
The rational bottom-up synthesis of atomically defined graphene nanoribbon (GNR) heterojunctions rep...
With the advent of atomically precise synthesis and consequent precise tailoring of their electronic...
The use of graphene in electronic devices requires a band gap, which can be achieved by creating nan...
Despite all of the promising properties that graphene has, there are some challenges facing graphene...
We report on the electronic transport of graphene nanoribbon (GNR) arrays fabricated by a chemical u...
Bandgap engineering is used to create semiconductor heterostructure devices that perform processes s...
Advancements in on-surface materials synthesis have led to the development of atomically precise gra...
Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applicati...
Lateral heterojunctions of atomically precise graphene nanoribbons GNRs hold promise for applicati...
Although it is generally accepted that structural parameters like width, shape, and edge structure c...
Graphene nanoribbons (GNRs) are promising candidates for next-generation integrated circuit (IC) com...
Graphene nanoribbons could potentially be used to create molecular wires with tailored conductance p...
With the advent of atomically precise synthesis and consequent precise tailoring of their electronic...
The rational bottom-up synthesis of atomically defined graphene nanoribbon (GNR) heterojunctions rep...
With the advent of atomically precise synthesis and consequent precise tailoring of their electronic...
The use of graphene in electronic devices requires a band gap, which can be achieved by creating nan...
Despite all of the promising properties that graphene has, there are some challenges facing graphene...
We report on the electronic transport of graphene nanoribbon (GNR) arrays fabricated by a chemical u...
Bandgap engineering is used to create semiconductor heterostructure devices that perform processes s...
Advancements in on-surface materials synthesis have led to the development of atomically precise gra...