Submonolayer to several monolayer thick films of the layered semiconductor InSe were deposited on highly oriented pyrolytic graphite by van der Waals epitaxy and probed by energy dependent angle resolved photoelectron spectroscopy. The layers show a transition from two-dimensional bands with atomiclike states to molecularlike states localized along the c direction normal to the surface. The extended band structure showing band dispersion was observed for thicker films
Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attrac...
Epitaxial growth of the strongly lattice mismatched (6.5%) layered chalcogenides InSe and GaSe on ea...
International audienceMetal monochalcogenide compounds offer a large variety of electronic propertie...
Submonolayer to several monolayer thick films of the layered semiconductor InSe were deposited on hi...
The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on ...
Sub-monolayer films of layered semiconductor InSe were grown on MoS2 substrates by molecular beam ep...
Controlling the propagation and intensity of an optical signal is central to several technologies ra...
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interest...
Atomically thin films of III–VI post-transition metal chalcogenides (InSe and GaSe) form an interest...
The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on ...
III–IV layered materials such as indium selenide have excellent photoelectronic properties. However,...
Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attrac...
Epitaxial growth of the strongly lattice mismatched (6.5%) layered chalcogenides InSe and GaSe on ea...
International audienceMetal monochalcogenide compounds offer a large variety of electronic propertie...
Submonolayer to several monolayer thick films of the layered semiconductor InSe were deposited on hi...
The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on ...
Sub-monolayer films of layered semiconductor InSe were grown on MoS2 substrates by molecular beam ep...
Controlling the propagation and intensity of an optical signal is central to several technologies ra...
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interest...
Atomically thin films of III–VI post-transition metal chalcogenides (InSe and GaSe) form an interest...
The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on ...
III–IV layered materials such as indium selenide have excellent photoelectronic properties. However,...
Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attrac...
Epitaxial growth of the strongly lattice mismatched (6.5%) layered chalcogenides InSe and GaSe on ea...
International audienceMetal monochalcogenide compounds offer a large variety of electronic propertie...