High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state
The crystal structures of GeSb2Te4, Ge2Sb2Te5, and Ge3Sb2Te6 were determined using electron diffract...
122 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.One long standing puzzle was ...
The crystal structures of GeSb2Te4, Ge2Sb2Te5, and Ge3Sb2Te6 were determined using electron diffract...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
As the chemical bonds in a covalent semiconductor are independent of long-range order, semiconductor...
Phase change materials involve the rapid and reversible transition between nanoscale amorphous (a-) ...
We present chemical state information on contamination-free Ge2Sb2Te5 thin film using high-resolutio...
Phase change alloys are materials with a unique combination of properties. On the one hand side they...
In this work the correlation between structural, electronic and optical properties of so-called phas...
Changes in the electronic structures of Ge2Sb2Te5 (GST) and N-doped Ge2Sb2Te5 film during the phase ...
122 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.One long standing puzzle was ...
Phase-change optical memories are based on the astonishingly rapid nanosecond-scale crystallization ...
Phase change memory, which is based on the reversible switching of phase change materials between am...
The crystal structures of GeSb2Te4, Ge2Sb2Te5, and Ge3Sb2Te6 were determined using electron diffract...
122 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.One long standing puzzle was ...
The crystal structures of GeSb2Te4, Ge2Sb2Te5, and Ge3Sb2Te6 were determined using electron diffract...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
As the chemical bonds in a covalent semiconductor are independent of long-range order, semiconductor...
Phase change materials involve the rapid and reversible transition between nanoscale amorphous (a-) ...
We present chemical state information on contamination-free Ge2Sb2Te5 thin film using high-resolutio...
Phase change alloys are materials with a unique combination of properties. On the one hand side they...
In this work the correlation between structural, electronic and optical properties of so-called phas...
Changes in the electronic structures of Ge2Sb2Te5 (GST) and N-doped Ge2Sb2Te5 film during the phase ...
122 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.One long standing puzzle was ...
Phase-change optical memories are based on the astonishingly rapid nanosecond-scale crystallization ...
Phase change memory, which is based on the reversible switching of phase change materials between am...
The crystal structures of GeSb2Te4, Ge2Sb2Te5, and Ge3Sb2Te6 were determined using electron diffract...
122 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.One long standing puzzle was ...
The crystal structures of GeSb2Te4, Ge2Sb2Te5, and Ge3Sb2Te6 were determined using electron diffract...