We use an atomistic approach to study the electronic properties of monolayer and bilayer black phosphorus in the vicinity of a charged defect. In particular, we combine screened defect potentials obtained from first-principles linear response theory with large-scale tight-binding simulations to calculate the wave functions and energies of bound acceptor and donor states. As a consequence of the anisotropic band structure, the defect states in these systems form distorted hydrogenic orbitals with a different ordering from that in isotropic materials. For the monolayer, we study the dependence of the binding energies of charged adsorbates on the defect height and the dielectric constant of a substrate in an experimental setup. We also compare...
2D semiconducting materials represent an interesting opportunity for the desired scaling of electron...
We identify and manipulate commonly occurring defects in black phosphorus, combining scanning tunnel...
By first principles calculations which include van der Waals interactions, we studied the electronic...
The atomic geometries and transition levels of point defects and substitutional dopants in few-layer...
Charged defects are frequently observed in quasi two-dimensional (2D) semiconductors such as monolay...
The electronic and geometric structures of a range of intrinsic and extrinsic defects in black phosp...
Recently, a new semiconducting 2D material, black phosphorus, has piqued the interest of research gr...
Utilizing a combination of low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) and ...
Optical and electronic properties of black phosphorus strongly depend on the number of layers and ty...
The atomic geometries and transition levels of point defects and substitutional dopants in few-layer...
Nominally pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ...
We investigate the electronic and optical properties of monolayer and stacking dependent bilayer blu...
Understanding the local electronic properties of individual defects and dopants in black phosphorus ...
Most recently, black phosphorus has come into focus as a promising material for future applications ...
Black phosphorus (BP), a 2D semiconducting material of interest in electronics and photonics, exhibi...
2D semiconducting materials represent an interesting opportunity for the desired scaling of electron...
We identify and manipulate commonly occurring defects in black phosphorus, combining scanning tunnel...
By first principles calculations which include van der Waals interactions, we studied the electronic...
The atomic geometries and transition levels of point defects and substitutional dopants in few-layer...
Charged defects are frequently observed in quasi two-dimensional (2D) semiconductors such as monolay...
The electronic and geometric structures of a range of intrinsic and extrinsic defects in black phosp...
Recently, a new semiconducting 2D material, black phosphorus, has piqued the interest of research gr...
Utilizing a combination of low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) and ...
Optical and electronic properties of black phosphorus strongly depend on the number of layers and ty...
The atomic geometries and transition levels of point defects and substitutional dopants in few-layer...
Nominally pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ...
We investigate the electronic and optical properties of monolayer and stacking dependent bilayer blu...
Understanding the local electronic properties of individual defects and dopants in black phosphorus ...
Most recently, black phosphorus has come into focus as a promising material for future applications ...
Black phosphorus (BP), a 2D semiconducting material of interest in electronics and photonics, exhibi...
2D semiconducting materials represent an interesting opportunity for the desired scaling of electron...
We identify and manipulate commonly occurring defects in black phosphorus, combining scanning tunnel...
By first principles calculations which include van der Waals interactions, we studied the electronic...