Variable temperature probing of minority carrier transport and optical properties in p -Ga2O3

International audienceElectron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal-organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa-VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa-VO++ defect complexes