Electron transport in a nanostructure containing delta impurities

The electronic transport properties in low dimensional systems have several important features which have attracted a wide range of both experimental and theoretical interests. The quantum ballistic transport regime in these small systems is achieved when dimensions of systems are less than the elastic mean free path and the phase coherent length. We have studied electron transport in a nanochannel, containing repulsive delta impurities. To find the conductance, a recursive Green's function method is used. The study includes finding the transverse eigenvaiues, eigenfunctions, and computing hopping integrals to determine the Green's propagators.The effects of the number, and position of the repulsive delta impurities with various potential strengths on the conductance in a nanostructure have been presented. A FORTRAN program has been used and developed for the numerical calculations. The general practical applications for nanostructures include the ability to make electronic devices smaller, denser and operate at very low voltages. The future electronic devices will utilize the developments of conductance through components having dimensions on the nanometer scale.Department of Physics and AstronomyThesis (M.S.