Photoluminescence (PL) spectra from GaAs thin layer is presented to find out the general characteristics of the material. The characters was known are photon energy, radiation transition type and gap energy. Then analyzed the relationship between intensity and wavelength spectrum of photoluminescence GaAs thin films at a temperature of 300 K and a temperature of 77 K using a focus lens and not using a focus lens. The design and setting up of tools for the characterization of thin films has been carried out based on the principle of photoluminescence (PL). Designing tools process used Corel Draw and Visio 2016 software. Tools used in characterization include green laser with a wavelength of 532.0 nm, laser power supply, 500 mm focus lens, o...
[[abstract]]Systematic studies of photoluminescence (PL) are used to characterize the heavily Te-dop...
The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give i...
Type-II GaAs/AlAs quantum-well samples grown by low-pressure metal-organic vapour-phase epitaxy cons...
We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the fi...
Semiconductor materials are very important in modern optoelectronics and microelectronics applicatio...
The first part of bachelor’s thesis deals with theory of photoluminescence in semiconductors, the se...
The absorption edge of thin-film GaAs on glass has been investigated with the standard constant phot...
The thesis briefly describes the principles and types of luminescence. In the first following resear...
Using micro-photoluminescence technique, we observed a new photoluminescence peak about 0.348 eV abo...
GaAs₁₋xBix is an exciting new semiconductor material, which has been pro posed as a new material for...
In the literature there is practically no information on the change in the characteristics of the em...
Contribution presents the electroluminescence, photoabsorption and polarization properties of semico...
This diploma thesis deals with noncontact temperature measurement using luminescent materials. In th...
Comparative studies of silicon (Si) incorporation in GaAs on both polar GaAs and nonpolar Ge substra...
This work describes the development of a facility for the spatial and spectral analysis of semicondu...
[[abstract]]Systematic studies of photoluminescence (PL) are used to characterize the heavily Te-dop...
The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give i...
Type-II GaAs/AlAs quantum-well samples grown by low-pressure metal-organic vapour-phase epitaxy cons...
We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the fi...
Semiconductor materials are very important in modern optoelectronics and microelectronics applicatio...
The first part of bachelor’s thesis deals with theory of photoluminescence in semiconductors, the se...
The absorption edge of thin-film GaAs on glass has been investigated with the standard constant phot...
The thesis briefly describes the principles and types of luminescence. In the first following resear...
Using micro-photoluminescence technique, we observed a new photoluminescence peak about 0.348 eV abo...
GaAs₁₋xBix is an exciting new semiconductor material, which has been pro posed as a new material for...
In the literature there is practically no information on the change in the characteristics of the em...
Contribution presents the electroluminescence, photoabsorption and polarization properties of semico...
This diploma thesis deals with noncontact temperature measurement using luminescent materials. In th...
Comparative studies of silicon (Si) incorporation in GaAs on both polar GaAs and nonpolar Ge substra...
This work describes the development of a facility for the spatial and spectral analysis of semicondu...
[[abstract]]Systematic studies of photoluminescence (PL) are used to characterize the heavily Te-dop...
The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give i...
Type-II GaAs/AlAs quantum-well samples grown by low-pressure metal-organic vapour-phase epitaxy cons...