Hyperfine mapping of donor wave function deformations in silicon phosphorus based quantum devices

The exponential miniaturization of semiconductor technology over the past 50 years has ushered in an era of nano-scale quantum electronics. As device sizes are shrinking, discrete dopant based Si nanostructures are expected to play a vital role in future electronics, and are the subject of much current research due to its scalibility and coherence time. However, there is still lack of direct knowledge how the electronic wave functions vary for different structures and how they can be engineered by electric and magnetic fields. We investigated how to map out donor electron wave function deformations in single donor system. To investigate single donor physics relevant to quantum architecture we used the Nano Electronic Modeling Tool (NEMO 3D) which provides semi-empirical tight-binding model using sp3d5s* models with or without spin to treat several million atoms. In the work, we studied a method for mapping the subtle changes that occur in the electron wave function through the measurement of the full hyperfine tensor probed by silicon isotope (29Si) in the presence of perturbations. Our results showed that detecting the donor wave function deformation is possible at sub-Bohr radius level. The accomplishment of 3-D mapping of electron with perturbations would aid in designing, engineering and manufacturing nanoscale devices, as well as next-generation microchips and other electronics with nanoscale features. It also might be useful in advancing quantum computing. Moreover, the technique has potential for wide applicability. In principle, it could be used to map wavefunctions in single electron silicon quantum dots, quantum wells and other nanostructures of interest