Modeling, design and fabrication of high-performance UMOSFETs in silicon carbide for power switching applications

This thesis is focused on the design and fabrication of SiC UMOS devices. Extensive numerical simulation is performed and some conclusions are reached on the strategy of designing high performance SiC power UMOS devices. UMOSFETs with HE technologies are demonstrated for the first time. These devices show world record performances. The device performance is analyzed and related to some fundamental issues about SiC material and process technologies