The growths of II-VI materials on gallium arsenide and silicon substrates and their applications

The molecular beam epitaxial growths of ZnSe-based II-VI materials were investigated in this research. The ZnSe-based II-VI material has a direct wide bandgap, and is promising for the building the short-wavelength optoelectronic devices, such as blue-green semiconductor lasers and ultraviolet detectors. This thesis focused on perfecting the II-VI material quality by the molecular beam epitaxy technology, and thus improve the laser device lifetime. Approaches of improving the material quality included defect reduction, enhancement of the material robustness, and the graded contact improvement. In addition, an accurate calibration for the unbonded GaAs wafer temperature during the MBE growth was also developed. In addition, we also explored the possibility of growing closely lattice-matched compound semiconductor on Si substrates, such as BeZnSe and GaP on Si via an particular BeTe interface in between. These semiconductor materials have direct bandgap into the range of UV emission, and the combination of compound semiconductor epilayers and Si substrates is promising in the application of optoelectronic integration circuit (OEIC)