Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s∗ semiempirical atomistic tight-binding model coupled to a self-consistent Poisson solver is used for the dispersion calculation. A semi-classical, ballistic FET model is used to evaluate the current-voltage characteristics. It is found that the total gate capacitance is degraded from the oxide capacitance value by 30% for wires in all the considered transport orientations ([100], [110], [111]). Different wire directions primarily influence the carrier velocities, which mainly determine the relative performance differences, while the total charge difference is...
In this letter, we explore the band structure effects on the performance of ballistic silicon nanowi...
The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbit...
Abstract—The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was comp...
Abstract—Bandstructure effects in the electronic transport of strongly quantized silicon nanowire fi...
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transist...
Abstract — A 20 band sp3d5s * spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model...
Uniaxial strain effects on electron ballistic transport in extremely scaled gate-all-around nanowire...
Uniaxial strain effects on electron ballistic transport in extremely scaled gate-all-around nanowire...
In this work we investigate band-structure effects on the transport characteristics of ultra-scaled ...
A 20 band sp(3)d(5)s* spin-orbit-coupled, semiempirical, atomistic tight-binding model is used with ...
Mobility and strain effects in silicon nanowire MOSFETs are extensively studied by experiments. The ...
In this work we investigate band structure effects on the current-voltage characteristics of ultra-s...
CMOS devices are evolving from planar to 3D non-planar devices at nanometer scale to meet the ITRS [...
The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly ...
none5Lateral size effects on surface-roughness limited mobility in silicon nanowire FETs are analyze...
In this letter, we explore the band structure effects on the performance of ballistic silicon nanowi...
The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbit...
Abstract—The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was comp...
Abstract—Bandstructure effects in the electronic transport of strongly quantized silicon nanowire fi...
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transist...
Abstract — A 20 band sp3d5s * spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model...
Uniaxial strain effects on electron ballistic transport in extremely scaled gate-all-around nanowire...
Uniaxial strain effects on electron ballistic transport in extremely scaled gate-all-around nanowire...
In this work we investigate band-structure effects on the transport characteristics of ultra-scaled ...
A 20 band sp(3)d(5)s* spin-orbit-coupled, semiempirical, atomistic tight-binding model is used with ...
Mobility and strain effects in silicon nanowire MOSFETs are extensively studied by experiments. The ...
In this work we investigate band structure effects on the current-voltage characteristics of ultra-s...
CMOS devices are evolving from planar to 3D non-planar devices at nanometer scale to meet the ITRS [...
The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly ...
none5Lateral size effects on surface-roughness limited mobility in silicon nanowire FETs are analyze...
In this letter, we explore the band structure effects on the performance of ballistic silicon nanowi...
The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbit...
Abstract—The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was comp...