International audienceThis paper presents the set of simulation means used to develop the concept of N2C2 (neural network compute cube) based on a vertical transistor technology platform. On the basis of state-of-the-art junctionless nanowire transistors (JLNT), TCAD simulation, compact modeling and EM simulation are leveraged through a Design- Technology Co-Optimization (DTCO) to achieve innovative 3D circuit architectures. Further, System-Technology Co-Optimization (STCO) implications on 3D NN system architecture are explored
Eickhoff R, Kaulmann T, Rückert U. Neural Inspired Architectures for Nanoelectronics. In: Sandoval F...
none3Three-dimensional (3D) manufacturing technologies are viewed as promising solutions to the ban...
International audienceWith the end in sight for Moore’s law and the end of Dennard’s scaling, the co...
International audienceThis paper presents the set of simulation means used to develop the concept of...
International audienceTo continue transistor downscaling beyond lateral 7nm devices, gate-all-around...
International audienceThis paper presents a physics based, computationally efficient compact modelin...
International audienceVertical Nanowire Junction-less Transistors (VN-WFET) are a promising technolo...
International audienceThanks to their brain-like properties, neural networks outperform traditional ...
International audienceTo sustain transistor scaling beyond lateral 7nm devices, gate-all-around (GAA...
International audienceGate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emergi...
International audienceGate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emergi...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...
Technology scaling predicted by Moore's law is gradually slowing down and new alternatives to silico...
Eickhoff R, Kaulmann T, Rückert U. Neural Inspired Architectures for Nanoelectronics. In: Sandoval F...
none3Three-dimensional (3D) manufacturing technologies are viewed as promising solutions to the ban...
International audienceWith the end in sight for Moore’s law and the end of Dennard’s scaling, the co...
International audienceThis paper presents the set of simulation means used to develop the concept of...
International audienceTo continue transistor downscaling beyond lateral 7nm devices, gate-all-around...
International audienceThis paper presents a physics based, computationally efficient compact modelin...
International audienceVertical Nanowire Junction-less Transistors (VN-WFET) are a promising technolo...
International audienceThanks to their brain-like properties, neural networks outperform traditional ...
International audienceTo sustain transistor scaling beyond lateral 7nm devices, gate-all-around (GAA...
International audienceGate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emergi...
International audienceGate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emergi...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...
Technology scaling predicted by Moore's law is gradually slowing down and new alternatives to silico...
Eickhoff R, Kaulmann T, Rückert U. Neural Inspired Architectures for Nanoelectronics. In: Sandoval F...
none3Three-dimensional (3D) manufacturing technologies are viewed as promising solutions to the ban...
International audienceWith the end in sight for Moore’s law and the end of Dennard’s scaling, the co...