Low-temperature photoluminescence of CuSe2 nano-objects in selenium thin films

Thin films of CuSe2 nanoparticles embedded in selenium matrix were prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by photoluminescence spectroscopy (T = 20-300K) and UV-VIS spectroscopy (T = 300K). Surface morphology was investigated by scanning electron microscopy. The band gap for direct transition in CuSe2 was found to be in the range of 2.72-2.75 eV and that for indirect transition is in the range of 1.71-1.75 eV determined by UV-VIS spectroscopy. On the other hand, selenium exhibits direct band gap in the range of 2.33-2.36 eV. All estimated band gaps slightly decrease with the increase of the film thickness. Photoluminescence spectra of the thin films clearly show emission bands at about 1.63 and 2.32 eV at room temperature, with no shift observed with decreasing temperature. A model was proposed for explaining such anomaly