Highly Reliable Quadruple-Node Upset-Tolerant D-Latch

This work was supported in part by the Spanish MCIN/AEI /10.13039/501100011033/ FEDER under Grant PID2020-117344RB-I00, and in part by the Regional Government under Grant P20_00265 and Grant P20_00633.As CMOS technology scaling pushes towards the reduction of the length of transistors, electronic circuits face numerous reliability issues, and in particular nodes of D-latches at nano-scale confront multiple-node upset errors due to their operation in harsh radiative environments. In this manuscript, a new high reliable D-latch which can tolerate quadruple-node upsets is presented. The design is based on a low-cost single event double-upset tolerant (LSEDUT) cell and a clock-gating triple-level soft-error interceptive module (CG-SIM). Due to its LSEDUT base, it can tolerate two upsets, but the combination of two LSEDUTs and the triple-level CG-SIM provides the proposed D-latch with remarkable quadruple-node upsets (QNU) tolerance. Applying LSEDUTs for designing a QNU-tolerant D-latch improves considerably its features; in particular, this approach enhances its reliability against process variations, such as threshold voltage and (W/L) transistor variability, compared to previous QNU-tolerant D-latches and double-node-upset tolerant latches. Furthermore, the proposed D-latch not only tolerates QNUs, but it also features a clear advantage in comparison with the previous clock gating-based quadruple-node-upset-tolerant (QNUTL-CG) D-latch: it can mask single event transients. Speci c gures of merit endorse the gains introduced by the new design: compared with the QNUTL-CG D-latch, the improvements of the maximum standard deviations of the gate delay, induced by threshold voltage and (W/L) transistors variability of the proposed D-latch, are 13.8% and 5.7%, respectively. Also, the proposed D-latch has 23% lesser maximum standard deviation in power consumption, resulting from threshold voltage variability, when compared to the QNUTL-CG D-latch.Spanish MCIN/AEI /10.13039/501100011033/ FEDER under Grant PID2020-117344RB-I00Regional Government under Grant P20_00265 and Grant P20_0063