This paper presents the development of a thermal-electrical finite element (FE) model with the objective to analyze failure mechanisms responsible of physical degradation (void, copper silicate formation, etc.) caused by high fluence stress of 90nm copper vias for FinfET devices. Indeed in [1], this physical degradation was interpreted as a main consequence of Joule effect, however their employed model reached too low temperatures to explain the observed physical degradation. In order to confirm this, the steady-state FE model developed in this work computes the temperature increase and distribution caused by high electrical current density flowing through a copper contact, considering non-ideal thermal and electrical interfaces. In additio...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
This PhD focuses on the study of the lifetime of components and power semiconductor modules under th...
Electromigration-induced degradation in solder joints can be classified into two types, pancake-type...
This paper presents the development of a thermal-electrical finite element (FE) model with the objec...
The mechanism behind the electromigration and thermomigration failure in flip-chip solder joints wit...
Abstract: Electronic power devices used for transportation applications (automotive and avionics) ex...
Failures introduced by the electromigration (EM) effect in copper interconnect is one of the top rel...
Les inductances et interconnexions des composants passifs intégrés pour la téléphonie mobile, sont s...
This thesis is a study of copper thin film on an alumina substrate in order to realize passive compo...
The resistivity and reliability of copper in interconnections of the integrated circuits for the 90 ...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
This thesis demonstrates the feasibility of using finite element analysis to model the thenno-mechan...
Through-silicon via (TSV) is one of the emerging technology enablers for the 3D Interconnects. TSV c...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
Various physical mechanisms are involved in an electromigration (EM) process occurring in metal thin...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
This PhD focuses on the study of the lifetime of components and power semiconductor modules under th...
Electromigration-induced degradation in solder joints can be classified into two types, pancake-type...
This paper presents the development of a thermal-electrical finite element (FE) model with the objec...
The mechanism behind the electromigration and thermomigration failure in flip-chip solder joints wit...
Abstract: Electronic power devices used for transportation applications (automotive and avionics) ex...
Failures introduced by the electromigration (EM) effect in copper interconnect is one of the top rel...
Les inductances et interconnexions des composants passifs intégrés pour la téléphonie mobile, sont s...
This thesis is a study of copper thin film on an alumina substrate in order to realize passive compo...
The resistivity and reliability of copper in interconnections of the integrated circuits for the 90 ...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
This thesis demonstrates the feasibility of using finite element analysis to model the thenno-mechan...
Through-silicon via (TSV) is one of the emerging technology enablers for the 3D Interconnects. TSV c...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
Various physical mechanisms are involved in an electromigration (EM) process occurring in metal thin...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
This PhD focuses on the study of the lifetime of components and power semiconductor modules under th...
Electromigration-induced degradation in solder joints can be classified into two types, pancake-type...