Numerical modeling has become an essential tool for scientists and engineers as it enhances the ability to understand certain device properties and several processes that occur in solar cell operation. The performance of CZTS thin film based solar cell was investigated with the aid of a simulation program called Solar Cell Capacitance Simulator (SCAPS 1-D) while varying the thickness of the absorber layer. CZTS semiconductors serves as the absorber layer in the cell structure, Al:ZnO/ZnO was utilized as the front contact and CdS/In2S3/ZnSe/SnS2/ as the window layer. Observation shows that ZnSe produced the most efficient cell of 13.79% (with Voc = 0.7289V, Jsc = 22.77mA/cm2, FF= 83.12%). Also, Temperature, carrier concentration and thicknes...
In this thesis, modeling and electrical characterization have been performed on Cu(In,Ga)Se2 (CIGS) ...
In this thesis, modeling and electrical characterization have been performed on Cu(In,Ga)Se2 (CIGS) ...
The effect of multivalent defect density, thickness of absorber and buffer layer thickness on the pe...
The development of CZTS-based solar cells is limited by two factors, the low open circuit voltage an...
<p>In the overall context of the diversification of the use of natural resources, the use of renewab...
The numerical modeling of a copper zinc tin sulfide (CZTS)-based kesterite solar cell is described i...
The quaternary compound Cu2ZnSnS4 (CZTS) is considered as an alternative material to replace CIGS m...
Cds buffer layer has many advantages such as large bandgap, and the carrier density. Otherwise, the ...
SCAPS- program is designed basically for the simulation and studying the properties of photonic devi...
Thin film Photovoltaic (PV) is a promising green technology in meeting future energy demand at trivi...
The quaternary compound Cu2ZnSnS4 (CZTS) is considered as an alternative material to replace CIGS m...
SCAPS- program is designed basically for the simulation and studying the properties of photonic devi...
The paper presents a simulation study using the numerical simulator SCAPS-1D to model ZnO/Cd0.8Zn0.2...
Abstract Cu2ZnSnS4 (CZTS)-based solar cells show a promising performance in the field of sunlight-ba...
In this thesis, modeling and electrical characterization have been performed on Cu(In,Ga)Se2 (CIGS) ...
In this thesis, modeling and electrical characterization have been performed on Cu(In,Ga)Se2 (CIGS) ...
In this thesis, modeling and electrical characterization have been performed on Cu(In,Ga)Se2 (CIGS) ...
The effect of multivalent defect density, thickness of absorber and buffer layer thickness on the pe...
The development of CZTS-based solar cells is limited by two factors, the low open circuit voltage an...
<p>In the overall context of the diversification of the use of natural resources, the use of renewab...
The numerical modeling of a copper zinc tin sulfide (CZTS)-based kesterite solar cell is described i...
The quaternary compound Cu2ZnSnS4 (CZTS) is considered as an alternative material to replace CIGS m...
Cds buffer layer has many advantages such as large bandgap, and the carrier density. Otherwise, the ...
SCAPS- program is designed basically for the simulation and studying the properties of photonic devi...
Thin film Photovoltaic (PV) is a promising green technology in meeting future energy demand at trivi...
The quaternary compound Cu2ZnSnS4 (CZTS) is considered as an alternative material to replace CIGS m...
SCAPS- program is designed basically for the simulation and studying the properties of photonic devi...
The paper presents a simulation study using the numerical simulator SCAPS-1D to model ZnO/Cd0.8Zn0.2...
Abstract Cu2ZnSnS4 (CZTS)-based solar cells show a promising performance in the field of sunlight-ba...
In this thesis, modeling and electrical characterization have been performed on Cu(In,Ga)Se2 (CIGS) ...
In this thesis, modeling and electrical characterization have been performed on Cu(In,Ga)Se2 (CIGS) ...
In this thesis, modeling and electrical characterization have been performed on Cu(In,Ga)Se2 (CIGS) ...
The effect of multivalent defect density, thickness of absorber and buffer layer thickness on the pe...