Scattering mechanisms and electronic transport properties in a Hg1-xCdxTe medium-infrared detector

We report here transport properties measurements and theoretical results on modeling carrier charge mobility in Hg 1-xCdxTe (x =0.22). Conductivity and Hall Effect were measured in the temperature range 4.2 - 300 K. Our measurements indicate that the sample is n-type semiconductor. In intrinsic regime, the slope of the curve RH T3/2 indicates a gap of 178 meV which agree well with Eg (x = 0.22, 300 K) = 183 meV. Our theoretical calculations, according to the Kane model, show that the Fermi energy EF increases with temperature. The calculated donor state Ed is 3 meV above the conduction band at 4.2 K and agrees well with 0.67 meV of low field Hall effect measurements. Our theoretical calculations on the mobility shows that ionized impurity scattering dominate below 25 K, optical phonons scattering at high temperatures (>70K) and the mobility is generated by the both mechanisms of scattering in the intermediate temperature regime. At high temperatures, an excellent agreement between experimental and calculated scattering mobility is obtained by introducing a trial function. The detection wave length situates the sample as medium-infrared detector