Electrical Properties Of Schottky Diodes Based On Poly (O-Toluidine) Deposited By Spincoating

The poly(o-toluidine) (POT) were synthesized by chemically oxidization. Their thin films were fabricated by spincoating on indium-tin-oxide (ITO) coated glass substrate. A Schottky diode with configuration ITO/POT/Al devices is fabricated. The Current-Voltage characteristics of the devices were non-linear indicating rectification behavior. The observed current-voltage characteristics can be satisfactorily fitted using the modified Shockley equation. The diode parameters were calculated from I-V characteristics and discussed. On the other hand, the Capacitance-Frequency and Capacitance-Voltage characteristics are presented and discussed.The poly(o-toluidine) (POT) were synthesized by chemically oxidization. Their thin films were fabricated by spincoating on indium-tin-oxide (ITO) coated glass substrate. A Schottky diode with configuration ITO/POT/Al devices is fabricated. The Current-Voltage characteristics of the devices were non-linear indicating rectification behavior. The observed current-voltage characteristics can be satisfactorily fitted using the modified Shockley equation. The diode parameters were calculated from I-V characteristics and discussed. On the other hand, the Capacitance-Frequency and Capacitance-Voltage characteristics are presented and discussed