Varying geometrical structures of tin oxide nanomaterial grown on silicon (100) substrate

Tin oxide nanomaterials were grown on silicon substrate using horizontal vapor phase growth technique. Optimum results were obtained at a temperature of 1200oC and at a deposition time of 3 hours. Scanning electron microscope and energy dispersive x-ray spectroscopy were employed to characterize the synthesized products. Image analysis indicated that the products consisted of nanomaterials ranging from nanobelts, nanowires, nanochips, nanorods and nanoribbons with preferred orientation and without unwanted SnO2 particles. The grown materials were then compared to SnO2 nanomaterial grown without a substrate. The nanorods and nanobelts growing form the quartz tube are random in direction compared to those grown on silicon substrates although the same growth technique was used.