Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains
- Bigenwald, Pierre
- Monemar, B
- Shubina, T. V.
- Toropov, A. A.
- Jmerik, V. N.
- Tkachman, M. G.
- Lebedev, A. V.
- Ratnikov, V. V.
- Sitnikova, A. A.
- Vekshin, V. A.
- Ivanov, S. V.
- Kop’ev, P. S.
- Bergman, J. P.
- Holtz, P. O.
DOIAbstract
GaN/AlGaN quantum wells (QWs) of dominant N polarity with inversion domains (IDs), grown by molecular-beam epitaxy, have been studied. Two-band photoluminescence (PL), with the lower-energy band and an additional absorption edge related to the IDs, is observed in these QWs due to a difference in strain, electric field, and well width in the regions of different polarities. A time-resolved PL study reveals additionally strong inhomogeneity of the electric fields among the IDs. The intrinsic electric fields in the structures are relatively small---their maximal estimated value of 180 kV/cm is among the lowest ever reported. The low-scale electric fields indicate likely polarization deterioration in the N-polarity structures. These conditions ...
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