International audienceAuger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of InP(100) surfaces nitridation. This AES study combined with electrical measurements (intensity-potential) shows that the processes greatly differ depending on the nitridation angles. Results show that with grazing angle for nitrogen flow, the nitridation process is more efficient. Results obtained with AES spectra are coherent with electrical measurements : Hg/InN/InP(100) Schottky diodes present better electrical characteristics in the case of a grazing flow. That means, the adsorption of nitrogen on the surface is more important for this configuration
Austenitic stainless steel SUS 316L was nitrided by active-screen plasma nitriding (ASPN) to investi...
We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a cl...
In this paper, we report the effects of oxygen, hydrogen, and deuterium on nitrogen implanted stainl...
International audienceThis article investigates the nitridation effect of InP(100) semiconductor sur...
This work deals with the nitridation of the indium phosphide. Indium phosphide is a III-V semiconduc...
International audienceThe nitridation of InP(1 0 0) surfaces has been studied using synchrotron radi...
The evolution of thin InN overlayer grown on InP(100) substrate versus the duration of nitridation p...
Ion beam nitridation of indium phosphide (100) substrates was studied using x-ray photoelectron spec...
Elements composition of niobium surface before and after plasma treatment by runaway electron preion...
International audienceThis paper reports on mass spectrometry analysis performed downstream a microw...
In this research the effect of the active screen’s material was investigated. 42CrMo4 steel was plas...
In situ photoemission electron spectroscopy (XPS) is used to elucidate the hydrogen etching mechanis...
The properties of InP are such that it has a wide range of applicability in the fabrication of elect...
Indium phosphide (InP) is a III-V semiconductor, which represents an ideal candidate for optoelectro...
In this paper, the authors demonstrate that Auger electron spectroscopy (AES) is an effective charac...
Austenitic stainless steel SUS 316L was nitrided by active-screen plasma nitriding (ASPN) to investi...
We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a cl...
In this paper, we report the effects of oxygen, hydrogen, and deuterium on nitrogen implanted stainl...
International audienceThis article investigates the nitridation effect of InP(100) semiconductor sur...
This work deals with the nitridation of the indium phosphide. Indium phosphide is a III-V semiconduc...
International audienceThe nitridation of InP(1 0 0) surfaces has been studied using synchrotron radi...
The evolution of thin InN overlayer grown on InP(100) substrate versus the duration of nitridation p...
Ion beam nitridation of indium phosphide (100) substrates was studied using x-ray photoelectron spec...
Elements composition of niobium surface before and after plasma treatment by runaway electron preion...
International audienceThis paper reports on mass spectrometry analysis performed downstream a microw...
In this research the effect of the active screen’s material was investigated. 42CrMo4 steel was plas...
In situ photoemission electron spectroscopy (XPS) is used to elucidate the hydrogen etching mechanis...
The properties of InP are such that it has a wide range of applicability in the fabrication of elect...
Indium phosphide (InP) is a III-V semiconductor, which represents an ideal candidate for optoelectro...
In this paper, the authors demonstrate that Auger electron spectroscopy (AES) is an effective charac...
Austenitic stainless steel SUS 316L was nitrided by active-screen plasma nitriding (ASPN) to investi...
We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a cl...
In this paper, we report the effects of oxygen, hydrogen, and deuterium on nitrogen implanted stainl...