Numerical Simulation of S-Shaped Current–Voltage Curves Induced by Electron Traps in Inverted Organic Photovoltaics

Organic photovoltaics (OPVs) differ from their inorganic counterparts because of inevitable electronic disorders and structural heterogeneity. Charge carrier traps are inevitable in organic semiconductors. A common failure mechanism of OPVs is the development of an S-shaped current density–voltage characteristic (J-V curve). Herein, we focus on investigating the underlying physical mechanism of S-shaped deformation of J-V curve of the inverted organic photovoltaic devices with bulk-heterojunction, proven by experiments with the n-doped electron extraction layer and numerical simulations assuming electron traps (0.1 eV deeper) in the electron extraction layer. The numerical simulations are quite consistent with the experimental results. In addition, the open circuit voltage induced by S-kink is exemplified to be enhanced after removing the electron traps in the interlayer by introducing a dopant of cesium carbonate