Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moir\'e Potential

Mahdikhanysarvejahany, Fateme
Shanks, Daniel N.
Klein, Mathew
Wang, Qian
Koehler, Michael R.
Mandrus, David G.
Taniguchi, Takashi
Watanabe, Kenji
Monti, Oliver L. A.
LeRoy, Brian J.
Schaibley, John R.

Publication date

March 2022

Abstract

Trapped interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest for use as single quantum emitter arrays and as an opportunity to study moir\'e physics in transition metal dichalcogenide (TMD) heterostructures. IXs are spatially indirectly excitons comprised of an electron in the MoSe2 layer bound to a hole in the WSe2 layer. Previous reports of spectrally narrow (<1 meV) photoluminescence (PL) emission lines at low temperature have been attributed to IXs localized by the moir\'e potential between the TMD layers. Here, we show that spectrally narrow IX PL lines are present even when the moir\'e potential is suppressed by inserting a bilayer hexagonal boron nitride (hBN) spacer between the TMD layers. We directly compa...