Individually Addressable Artificial Atoms in Silicon Photonics

Artificial atoms in solids have emerged as leading systems for quantum information processing tasks such as quantum networking, sensing, and computing. A central goal is to develop platforms for precise and scalable control of individually addressable artificial atoms that feature efficient optical interfaces. Color centers in silicon, such as the recently-isolated carbon-related 'G-center', exhibit emission directly into the telecommunications O-band and can leverage the maturity of silicon-on-insulator (SOI) photonics. Here, we demonstrate generation and individual addressing of G-center artificial atoms in a SOI photonic integrated circuit (PIC) platform. Focusing on the neutral charge state emission at 1278nm, we observe waveguide-coupled single photon emission with an exceptionally narrow inhomogeneous distribution with standard deviation of 1.1nm, an excited state lifetime of 8.3$\pm$0.7ns, and no degradation after months of operation. This demonstration opens the path to quantum information processing based on implantable artificial atoms in very large scale integrated (VLSI) photonics.Comment: 14 pages, 12 figure