Scanning tunneling spectroscopy in ultrahigh vacuum conditions and conductive atomic-force microscopy in ambient conditions were used to study local electroresistive properties of ferroelectric tunnel junctions SrTiO3/La0.7Sr0.3MnO3/BaTiO3. Interestingly, experimental current-voltage characteristics appear to strongly depend on the measurement technique applied. It was found that screening conditions of the polarization charges at the interface with a top electrode differ for two scanning probe techniques. As a result, asymmetry of the tunnel barrier height for the opposite ferroelectric polarization orientations may be influenced by the method applied to study the local tunnel electroresistance. Our observations are well described by the t...
Ferroelectric tunnel junctions are promising candidates for the realization of energy-efficient digi...
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001)...
Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applic...
Scanning tunneling spectroscopy in ultrahigh vacuum conditions and conductive atomic-force microscop...
The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroele...
Ferroelectric polarization-coupled resistive switching behavior in ferroelectric tunnel junctions (F...
Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions...
Conducting atomic force microscopy images of bulk semiconducting BaTiO3 surfaces show clear stripe d...
In this paper, a theoretical approach comprising the nonequilibrium Green’s function method for elec...
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two meta...
Realizing a large tunneling electroresistance (TER) effect is crucial for device application of ferr...
The effect of an applied mechanical stress on the tunneling conductance of a ferroelectric tunnel ba...
The range of recently discovered phenomena in complex oxide heterostructures, made possible owing to...
Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER)...
In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences th...
Ferroelectric tunnel junctions are promising candidates for the realization of energy-efficient digi...
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001)...
Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applic...
Scanning tunneling spectroscopy in ultrahigh vacuum conditions and conductive atomic-force microscop...
The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroele...
Ferroelectric polarization-coupled resistive switching behavior in ferroelectric tunnel junctions (F...
Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions...
Conducting atomic force microscopy images of bulk semiconducting BaTiO3 surfaces show clear stripe d...
In this paper, a theoretical approach comprising the nonequilibrium Green’s function method for elec...
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two meta...
Realizing a large tunneling electroresistance (TER) effect is crucial for device application of ferr...
The effect of an applied mechanical stress on the tunneling conductance of a ferroelectric tunnel ba...
The range of recently discovered phenomena in complex oxide heterostructures, made possible owing to...
Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER)...
In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences th...
Ferroelectric tunnel junctions are promising candidates for the realization of energy-efficient digi...
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001)...
Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applic...